High speed Silicon Sensors – Centronic EO

High Speed Extended IR response (Series 3T)

3T series photodetectors are specifically designed for high speed, infra-red laser pulse detection. The detector structure designed to be fully depleted at 60 volts reverse bias, uses high resistivity silicon to achieve very low capacitance. The detectors offer high responsivity in the 800-1000 nm range but are equally suited to high speed application at longer wavelengths where maximum absolute responsivity is not as important as speed of response.

High Speed 1064nm Pulse sensing (Series 4X)

The 4X series of photodetectors are designed specifically for sensing high speed 1064 nm Nd YAG laser pulses. The detector structure is designed to be fully depleted at 150 volts reverse bias and offers high pulsed and DC responsivity at wavelengths up to 1100 nm coupled with an extremely low capacitance per unit area.

High Speed Detectors (BPX65)

The BPX65 family of detectors feature Centronic’s 1mm2 high speed, high sensitivity chip already successful in a wide variety of applications. The chip can be packaged in various forms suitable for fibre-optic communication, such as the AX65-RF (precisely centred, isolated, low chip to window spacing) a standard 2 or 3 lead TO18 or even epoxy encapsulated. It has also been used for encoder designs and with MIL SPEC release at the heart of advanced laser warning systems.

Ultra High Speed Detectors (AEPX)

The AEPX Series of photodiodes is offered in a range of small active area sizes suitable for high frequency fibre optic applications. These photodetectors take advantage of an epitaxial structure to achieve good high frequency response at operating voltages as low as 5 volts. The detectors may also be operated at higher bias levels up to 20 volts to achieve extremely fast pulsed response.

High Speed Silicon Sensors features:

High speed IR (series 3T)

  • bias: 60V
  • response: 400-1100nm
  • responsivity (900nm): 0.61 A/W
  • technology: pn fully depleted

1064nm pulsed (series 4X)

  • bias: 150V
  • response: 400-1100nm
  • responsivity (1064nm): 0.4 A/W
  • technology: pin fully depleted

High speed (BPX65)

  • bias: 20V
  • response: 400-1064nm
  • responsivity (900nm): 0.55 A/W
  • risetime: 3.5 ns
  • rechnology: pn junction

Ultra high speed (AEPX)

  • bias: 5V
  • response: 450-1064nm
  • responsivity (820nm) 0.35 A/W
  • risetime: 0.3 to 0.6 ns
  • technology: epitaxial

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Fabrikant

Centronic EO

Silicium fotodioden voor UV-VIS-IR, X-ray en ioniserende stralings in verschillende of klantspecifieke behuizing. ...