Infra-red Silicon Sensors – Centronic EO

3T series photodetectors are specifically designed for high speed, infra-red laser pulse detection. The detector structure designed to be fully depleted at 60 volts reverse bias, uses high resistivity silicon to achieve very low capacitance. The detectors offer high responsivity in the 800-1000 nm range but are equally suited to high speed application at longer wavelengths where maximum absolute responsivity is not as important as speed of response.

Infra-red Silicon Sensors features:

  • bias: 60V
  • response: 400-1100nm
  • responsivity (900nm): 0.61 A/W
  • technology: pn fully depleted

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Centronic EO

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